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IRFS7730-7PPBF

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IRFS7730-7PPBF

MOSFET N-CH 75V 240A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' StrongIRFET™ series MOSFET, part number IRFS7730-7PPBF, is an N-Channel power MOSFET designed for high-current applications. This device features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) capability of 240 A at 25°C (Tc). The IRFS7730-7PPBF offers a low on-resistance (Rds On) of 2 mOhm at 100 A and 10 V, minimizing conduction losses. With a maximum power dissipation of 375 W (Tc), it is suitable for demanding thermal environments. The MOSFET utilizes a D2PAK (7-Lead) surface mount package, facilitating efficient thermal management and assembly. Key electrical parameters include a gate charge (Qg) of 428 nC at 10 V and input capacitance (Ciss) of 13970 pF at 25 V. This component finds application in industrial power supplies, electric vehicle powertrains, and high-power motor control systems. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id3.7V @ 250µA
Supplier Device PackageD2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs428 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13970 pF @ 25 V

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