IRFS7534PBF
MOSFET N CH 60V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFS7534PBF, an N-Channel Power MOSFET from the StrongIRFET™ series. This robust component offers a drain-source voltage (Vdss) of 60V and supports a continuous drain current (Id) of 195A at 25°C (Tc), with a maximum power dissipation of 294W (Tc). Engineered for high-power switching applications, it features a low on-resistance (Rds On) of 2.4mOhm at 100A and 10V. The device utilizes a D2PAK (TO-263-3) surface mount package, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 279 nC at 10V and input capacitance (Ciss) of 10034 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications across industrial, automotive, and power supply sectors.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 294W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 279 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10034 pF @ 25 V |
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