IRFS7530PBF
MOSFET N-CH 60V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel Power MOSFET, part number IRFS7530PBF, offers a 60V drain-source breakdown voltage and a continuous drain current rating of 195A at 25°C (Tc). This surface mount device, packaged in a TO-263AB D2PAK, features a low on-resistance of 2mOhm at 100A and 10V Vgs. With a maximum power dissipation of 375W (Tc) and a gate charge of 411nC at 10V, it is suitable for high-current switching applications. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial power supplies, automotive applications, and motor control systems. The IRFS7530PBF series is built with advanced MOSFET technology for efficient power management.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 411 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13703 pF @ 25 V |
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