IRFS7440PBF
MOSFET N CH 40V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel Power MOSFET, part number IRFS7440PBF, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). This device features a low on-resistance of 2.5mOhm maximum at 100A and 10V Vgs. The MOSFET is packaged in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 208W (Tc). Key characteristics include a gate charge of 135 nC at 10V Vgs and input capacitance of 4730 pF at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for demanding applications in automotive and industrial power systems.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4730 pF @ 25 V |
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