IRFS7434PBF
MOSFET N-CH 40V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFS7434PBF is a robust N-Channel Power MOSFET from the StrongIRFET™ series. This component features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) capability of 195A at 25°C, with a maximum power dissipation of 294W. The device offers a low on-resistance (Rds On) of 1.6mOhm at 100A and 10V, supported by a gate charge (Qg) of 324 nC at 10V. Designed for demanding applications, it operates across a temperature range from -55°C to 175°C. The IRFS7434PBF utilizes a surface mount D2PAK (TO-263-3) package, suitable for high-efficiency power conversion and management in industrial and automotive sectors.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 294W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 324 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10820 pF @ 25 V |
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