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IRFS7434-7PPBF

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IRFS7434-7PPBF

MOSFET N-CH 40V 240A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' IRFS7434-7PPBF, a N-Channel MOSFET from the StrongIRFET™ series, offers robust performance with a 40V drain-source voltage and a continuous drain current of 240A at 25°C (Tc). This device features a low on-resistance of 1mOhm maximum at 100A and 10V, aided by a gate charge of 315 nC maximum at 10V. The input capacitance (Ciss) is 10250 pF maximum at 25V. Designed for surface mounting, it is housed in a D2PAK (7-Lead) TO-263-7 package. With a maximum power dissipation of 245W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for demanding applications in industrial automation, power supplies, and electric vehicle systems. The gate-source voltage has a maximum rating of ±20V, and the threshold voltage (Vgs(th)) is 3.9V maximum at 250µA.

Additional Information

Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs1mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)245W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageD2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10250 pF @ 25 V

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