IRFS5620TRLPBF
MOSFET N-CH 200V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFS5620TRLPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component offers a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 24A at 25°C (Tc). With a maximum Rds(on) of 77.5mOhm at 15A and 10V Vgs, it ensures low conduction losses. The device features a gate charge (Qg) of 38 nC (max) at 10V and an input capacitance (Ciss) of 1710 pF (max) at 50V, facilitating efficient switching. The maximum power dissipation is 144W (Tc). This MOSFET is housed in a TO-263-3, D2PAK package, suitable for surface mounting, and is supplied on tape and reel. It operates across a wide temperature range of -55°C to 175°C (TJ). The IRFS5620TRLPBF is utilized in various industries including industrial automation, power supplies, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 77.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 50 V |
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