IRFS5620PBF
MOSFET N-CH 200V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFS5620PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) rating of 24A at 25°C (Tc). The low on-resistance (Rds On) of 77.5mOhm at 15A and 10V gate drive makes it suitable for power conversion and management circuits. With a maximum power dissipation of 144W (Tc) and a junction operating temperature range of -55°C to 175°C, this MOSFET is engineered for demanding thermal environments. The IRFS5620PBF is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient board layout and thermal performance. Its typical applications include power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 77.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 50 V |
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