IRFS5615PBF
MOSFET N-CH 150V 33A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel, part number IRFS5615PBF, is a robust solution for high-power switching applications. This device features a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 33A at 25°C, with a maximum power dissipation of 144W (Tc). The N-channel MOSFET is housed in a TO-263-3, D2PAK package for efficient surface mounting. Key electrical characteristics include a maximum Rds On of 42mOhm at 21A and 10V, and a gate charge (Qg) of 40nC at 10V. The input capacitance (Ciss) is rated at a maximum of 1750pF at 50V. Operating across a wide temperature range from -55°C to 175°C (TJ), this component is suitable for demanding environments found in industrial power supplies, electric vehicle systems, and renewable energy inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 50 V |
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