IRFS52N15DTRRP
MOSFET N-CH 150V 51A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFS52N15DTRRP, offers a 150V drain-source breakdown voltage and a continuous drain current of 51A at 25°C (Tc). This device features a low on-resistance of 32mOhm maximum at 36A and 10V Vgs. The IRFS52N15DTRRP is housed in a D2PAK (TO-263-3) surface-mount package, suitable for high-power applications. Key electrical parameters include a gate charge of 89 nC (max) and input capacitance of 2770 pF (max). With a maximum power dissipation of 230W (Tc), this MOSFET is engineered for demanding switching applications. Typical industries utilizing this component include automotive and industrial power control. It operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 25 V |
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