IRFS52N15DPBF
MOSFET N-CH 150V 51A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRFS52N15DPBF, features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 51A at 25°C (Tc). This surface mount component, packaged in a TO-263-3, D2PAK, offers a maximum Rds On of 32mOhm at 36A and 10V. Key parameters include a Gate Charge (Qg) of 89 nC at 10V and Input Capacitance (Ciss) of 2770 pF at 25V. Power dissipation is rated at 3.8W (Ta) and 230W (Tc). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 25 V |
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