IRFS4710PBF
MOSFET N-CH 100V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4710PBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). The low on-resistance of 14mOhm at 45A and 10V gate-source voltage, coupled with a maximum gate charge of 170 nC at 10V, ensures efficient power switching.
With a maximum power dissipation of 200W (Tc) and a thermal resistance optimized for the TO-263-3, D2PAK package (TO-263AB), this MOSFET is suitable for applications requiring robust thermal management. The input capacitance (Ciss) is 6160 pF at 25V, and the unit is rated for operation across a wide temperature range from -55°C to 175°C (TJ). Typical industries utilizing this device include automotive, industrial power control, and high-power computing.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6160 pF @ 25 V |
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