IRFS4615PBF
MOSFET N-CH 150V 33A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4615PBF is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 33A at 25°C (Tc). With a low on-resistance (Rds On) of 42mOhm at 21A and 10V gate-source voltage (Vgs), it minimizes conduction losses. The IRFS4615PBF offers a maximum power dissipation of 144W (Tc) and a junction temperature range of -55°C to 175°C, making it suitable for demanding applications. Key parameters include a gate charge (Qg) of 40 nC at 10V and an input capacitance (Ciss) of 1750 pF at 50V. The component is housed in a TO-263-3, D2PAK package, facilitating surface mounting. This MOSFET finds application in various power management systems, including industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 50 V |