IRFS4610TRRPBF
MOSFET N-CH 100V 73A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4610TRRPBF is an N-Channel Power MOSFET designed with 100V drain-source breakdown voltage. This component features a low on-resistance of 14mOhm maximum at 44A and 10V gate drive. It supports a continuous drain current of 73A at 25°C (Tc) and a maximum power dissipation of 190W (Tc). The device utilizes a surface mount D2PAK (TO-263-3) package, supplied on tape and reel (TR). Key parameters include a gate charge (Qg) of 140nC typical at 10V and input capacitance (Ciss) of 3550pF maximum at 50V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in industrial power systems and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 50 V |