IRFS4510TRLPBF
MOSFET N-CH 100V 61A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4510TRLPBF is an N-Channel power MOSFET designed for high-efficiency power conversion. This component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 61A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The Rds(On) is specified at a low 13.9mOhm at 37A and 10V Vgs, ensuring minimal conduction losses. Key parameters include a gate charge (Qg) of 87 nC (max) at 10V Vgs and an input capacitance (Ciss) of 3180 pF (max) at 50V Vds. Operating across a temperature range of -55°C to 175°C (TJ), the IRFS4510TRLPBF is housed in a TO-263-3, D2PAK (2 leads + tab) package, suitable for surface mounting. This device finds application in demanding sectors such as automotive, industrial power supplies, and telecommunications infrastructure. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3180 pF @ 50 V |
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