IRFS4510PBF
MOSFET N-CH 100V 61A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRFS4510PBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 61A at 25°C (Tc). The low on-resistance (Rds On) of 13.9mOhm at 37A and 10V gate-source voltage (Vgs) ensures efficient power transfer with minimal losses. With a maximum power dissipation of 140W (Tc), the IRFS4510PBF is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 87 nC (max) at 10V Vgs and an input capacitance (Ciss) of 3180 pF (max) at 50V Vds. The device is housed in a surface-mount TO-263-3, D2PAK package, facilitating integration into compact designs. It operates reliably across a wide temperature range of -55°C to 175°C (TJ). This MOSFET finds utility in various industries, including automotive, industrial power control, and telecommunications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3180 pF @ 50 V |
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