IRFS4410TRLPBF
MOSFET N-CH 100V 88A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4410TRLPBF is an N-Channel Power MOSFET designed for demanding applications. This surface mount component, housed in a TO-263-3 (D2PAK) package, features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 88A at 25°C (Tc). With a maximum power dissipation of 200W (Tc) and a low on-resistance (Rds On) of 10mOhm at 58A and 10V, it offers efficient power handling. Key electrical characteristics include a gate charge (Qg) of 180 nC at 10V and input capacitance (Ciss) of 5150 pF at 50V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in power supply, automotive, and industrial control systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V |
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