IRFS4321TRRPBF
MOSFET N-CH 150V 85A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4321TRRPBF is a N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 85A at 25°C, with a maximum power dissipation of 350W (Tc). The Rds(on) is specified at 15mOhm maximum at 33A and 10V gate drive. Key electrical characteristics include input capacitance (Ciss) of 4460pF and gate charge (Qg) of 110nC, both measured at specified Vds and Vgs. The device is housed in a TO-263-3, D2PAK surface mount package, supplied on tape and reel. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power supplies, and electric vehicle charging systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 25 V |
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