IRFS4321TRL7PP
MOSFET N-CH 150V 86A D2PAK-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFS4321TRL7PP, offers 150V drain-to-source voltage and 86A continuous drain current at 25°C. This surface mount device features a low Rds(on) of 14.7mOhm at 34A and 10V Vgs, with a maximum power dissipation of 350W. The input capacitance (Ciss) is 4460pF at 50V, and gate charge (Qg) is 110nC at 10V. The TO-263-7, D2PAK (6 leads + tab) package is supplied on tape and reel. This component is suitable for high-power applications in the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 50 V |
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