IRFS4321-7PPBF
MOSFET N-CH 150V 86A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4321-7PPBF is a N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous Current Drain (Id) of 86A at 25°C (Tc). The device offers a low On-Resistance (Rds On) of 14.7mOhm maximum at 34A and 10V Vgs, contributing to efficient power delivery. With a maximum power dissipation of 350W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. Key parameters include a Gate Charge (Qg) of 110 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 4460 pF maximum at 50V Vds. The IRFS4321-7PPBF is presented in a D2PAK (7-Lead) surface mount package, commonly utilized in industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 50 V |
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