IRFS4310TRLPBF
MOSFET N-CH 100V 130A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFS4310TRLPBF is an N-Channel power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 130A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The Rds(On) is specified at a low 7mOhm at 75A and 10V gate drive. Key parameters include a gate charge (Qg) of 250 nC (max) at 10V and input capacitance (Ciss) of 7670 pF (max) at 50V. The device operates over a temperature range of -55°C to 175°C (TJ) and is housed in a TO-263-3, D2PAK package, suitable for surface mounting. This MOSFET is utilized in demanding sectors such as industrial power supplies, automotive systems, and electric vehicle charging infrastructure.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 50 V |