IRFS4229PBF
MOSFET N-CH 250V 45A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET N-Channel, part number IRFS4229PBF, features a 250V drain-source breakdown voltage and a continuous drain current of 45A at 25°C (Tc). This device offers a maximum Rds(on) of 48mOhm at 26A and 10V. The N-Channel MOSFET technology is housed in a TO-263-3, D2PAK surface mount package, enabling efficient thermal management with a maximum power dissipation of 330W (Tc). Key electrical parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 4560 pF at 25V. Optimized for high-power switching applications, this component is suitable for use in industrial power supplies, motor control, and automotive systems. The operating temperature range is -40°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 25 V |