IRFS4228TRLPBF
MOSFET N-CH 150V 83A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4228TRLPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component offers a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 83A at 25°C, with a maximum power dissipation of 330W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 15mOhm at 33A and 10V, and a gate charge (Qg) of 107 nC at 10V. The device features a D2PAK (TO-263-3) surface mount package for robust thermal management. This MOSFET is well-suited for use in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4530 pF @ 25 V |