IRFS4228PBF
MOSFET N-CH 150V 83A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFS4228PBF is an N-channel power MOSFET with a drain-source voltage (Vdss) of 150V. This device features a continuous drain current (Id) of 83A at 25°C (Tc) and a maximum power dissipation of 330W (Tc). The Rds On is specified at 15mOhm maximum at 33A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 107 nC maximum at 10V Vgs and input capacitance (Ciss) of 4530 pF maximum at 25V Vds. The IRFS4228PBF utilizes advanced MOSFET technology and is packaged in a D2PAK (TO-263-3, D2PAK) surface mount configuration. Operating temperature ranges from -40°C to 175°C (TJ). This component is suitable for applications in industrial power supplies, automotive systems, and motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4530 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
