IRFS4227PBF
MOSFET N-CH 200V 62A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4227PBF is a 200V N-Channel power MOSFET. This device features a continuous drain current capability of 62A at 25°C (Tc) and a maximum power dissipation of 330W (Tc). The Rds(on) is specified at 26mOhm maximum for a drain current of 46A with a 10V gate-source voltage. Key parameters include a gate charge (Qg) of 98 nC maximum at 10V and input capacitance (Ciss) of 4600 pF maximum at 25V. The MOSFET operates within an extended temperature range of -40°C to 175°C (TJ). It is housed in a TO-263-3, D2PAK package for surface mounting. This component is suitable for applications in electric vehicle charging, industrial power supplies, and server power.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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