IRFS41N15DTRR
MOSFET N-CH 150V 41A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series IRFS41N15DTRR is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and offers a continuous drain current (Id) of 41A at 25°C (Tc). With a maximum on-resistance (Rds On) of 45mOhm at 25A and 10V, it ensures efficient power transfer. Key parameters include gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 2520 pF at 25V. The device is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is utilized in automotive, industrial, and power supply sectors. The packaging is Tape & Reel (TR).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 25 V |
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