IRFS4127PBF
MOSFET N-CH 200V 72A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFS4127PBF, offers a 200V drain-source breakdown voltage and 72A continuous drain current at 25°C (Tc). This device features a low on-resistance of 22mOhm maximum at 44A and 10V Vgs, with a gate charge of 150nC maximum at 10V. The input capacitance (Ciss) is 5380pF maximum at 50V. Designed for surface mounting in a TO-263-3, D2PAK package, this MOSFET provides 375W power dissipation at 25°C (Tc) and operates across a temperature range of -55°C to 175°C (TJ). It is suitable for demanding applications in sectors such as industrial power supplies, automotive, and high-power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5380 pF @ 50 V |
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