IRFS4115TRL7PP
MOSFET N-CH 150V 105A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRFS4115TRL7PP, offers robust performance with a Drain-to-Source Voltage (Vdss) of 150 V and a continuous drain current (Id) of 105 A at 25°C. This device features a low Rds(on) of 11.8 mOhm at 63 A and 10 V, coupled with a high power dissipation capability of 380 W (Tc). The N-Channel MOSFET technology ensures efficient switching characteristics, with a gate charge (Qg) of 110 nC at 10 V and input capacitance (Ciss) of 5320 pF at 50 V. Supplied in a D2PAK (7-Lead) surface mount package on tape and reel, it is suitable for demanding applications in sectors such as industrial power supplies, automotive systems, and renewable energy. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.8mOhm @ 63A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5320 pF @ 50 V |