IRFS4115PBF
MOSFET N-CH 150V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFS4115PBF, is engineered for high-performance applications. This surface mount device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 195A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The IRFS4115PBF exhibits a low Rds On of 12.1mOhm at 62A and 10V, facilitated by its 10V gate drive requirement. Key parameters include a Gate Charge (Qg) of 120 nC at 10V and an Input Capacitance (Ciss) of 5270 pF at 50V. This MOSFET is housed in a TO-263-3, D2PAK package and operates across a temperature range of -55°C to 175°C (TJ). Its robust specifications make it suitable for demanding power conversion and control systems within industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V |
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