IRFS4115-7PPBF
MOSFET N-CH 150V 105A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4115-7PPBF is a high-performance N-Channel Power MOSFET. This component features a 150V drain-source breakdown voltage and a continuous drain current capability of 105A at 25°C (Tc), with a maximum power dissipation of 380W (Tc). The Rds(on) is specified at a maximum of 11.8mOhm at 63A and 10V gate drive. Key parameters include a gate charge (Qg) of 110 nC @ 10V and input capacitance (Ciss) of 5320 pF @ 50V. Designed for surface mounting, it utilizes the D2PAK (7-Lead) package. This MOSFET is suitable for demanding applications across various industries, including industrial power supplies, automotive systems, and high-power conversion. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.8mOhm @ 63A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5320 pF @ 50 V |