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IRFS4020TRLPBF

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IRFS4020TRLPBF

MOSFET N-CH 200V 18A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies IRFS4020TRLPBF is an N-Channel Power MOSFET designed for high-efficiency applications. This component offers a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 18 A at 25°C (Tc). Featuring a low on-resistance of 105 mOhm maximum at 11 A and 10 V (Vgs), the IRFS4020TRLPBF minimizes conduction losses. Its gate charge (Qg) is specified at 29 nC maximum at 10 V, and input capacitance (Ciss) is 1200 pF maximum at 50 V, facilitating efficient switching performance. The MOSFET is housed in a TO-263-3, D2PAK package, suitable for surface mounting and capable of dissipating up to 100 W (Tc). With a maximum continuous gate-source voltage of ±20 V and an operating temperature range of -55°C to 175°C (TJ), this component is well-suited for use in power supplies, motor control, and automotive systems. The product is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)100W (Tc)
Vgs(th) (Max) @ Id4.9V @ 100µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 50 V

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