IRFS4020PBF
MOSFET N-CH 200V 18A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFS4020PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 18A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 105mOhm at 11A and 10V gate drive. With a power dissipation capability of 100W (Tc), it is suitable for high-power switching and linear applications across various industries including industrial automation, power supplies, and electric vehicle systems. Key electrical parameters include a Gate Charge (Qg) of 29nC (Max) at 10V and an Input Capacitance (Ciss) of 1200pF (Max) at 50V. The MOSFET is housed in a TO-263-3, D2PAK package for efficient surface mounting and operates within a temperature range of -55°C to 175°C (TJ). This component utilizes MOSFET technology and supports a maximum Gate-Source Voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 50 V |
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