IRFS4010TRL7PP
MOSFET N-CH 100V 190A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4010TRL7PP is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current capability of 190 A at 25°C (Tc). The Rds(on) is specified at a maximum of 4 mOhm at 110 A and 10 V, with a gate drive voltage range of 10V. Input capacitance (Ciss) is 9830 pF at 50 V, and gate charge (Qg) is a maximum of 230 nC at 10 V. The device offers a maximum power dissipation of 380 W (Tc) and operates within an ambient temperature range of -55°C to 175°C (TJ). The IRFS4010TRL7PP is supplied in a TO-263-7, D2PAK package, suitable for surface mounting and supplied on tape and reel. This MOSFET is utilized in industries such as automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9830 pF @ 50 V |
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