IRFS4010-7PPBF
MOSFET N-CH 100V 190A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS4010-7PPBF is an N-Channel Power MOSFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 190A at 25°C, with a maximum power dissipation of 380W (Tc). The Rds(on) is specified at a low 4mOhm at 110A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 230 nC @ 10 V and an input capacitance (Ciss) of 9830 pF @ 50 V. The device utilizes MOSFET technology and is housed in a D2PAK (TO-263-7) surface mount package. This robust MOSFET is suitable for demanding applications in the automotive and industrial sectors. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9830 pF @ 50 V |