IRFS3806PBF
MOSFET N-CH 60V 43A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET N-Channel, part number IRFS3806PBF. This device features a 60V drain-source voltage (Vdss) and a continuous drain current of 43A at 25°C (Tc). The IRFS3806PBF offers a low on-resistance (Rds On) of 15.8mOhm maximum at 25A and 10V gate-source voltage. It is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration. The maximum power dissipation is 71W (Tc). Key parameters include a gate charge (Qg) of 30nC maximum at 10V and input capacitance (Ciss) of 1150pF maximum at 50V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
