IRFS3607PBF
MOSFET N-CH 75V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFS3607PBF, offers a 75V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). This surface-mount device, housed in a TO-263-3 D2PAK package, features a low on-resistance of 9mOhm maximum at 46A and 10V Vgs. With a gate charge of 84nC maximum at 10V and input capacitance of 3070pF maximum at 50V, it is suitable for high-efficiency switching applications. The device supports a maximum gate-source voltage of ±20V and a threshold voltage of 4V maximum at 100µA. Its power dissipation capability is 140W at 25°C (Tc) and it operates across a temperature range of -55°C to 175°C. This component finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |