IRFS3507
MOSFET N-CH 75V 97A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3507 is an N-channel power MOSFET designed for demanding applications. This component offers a continuous drain current of 97A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 75V. The device features a low on-resistance (Rds(on)) of 8.8mOhm maximum at 58A and 10V gate drive, contributing to efficient power delivery. With a maximum power dissipation of 190W (Tc), it is suitable for high-power switching in various industrial sectors. The IRFS3507 is packaged in a TO-263-3, D2PAK (TO-263AB) surface mount configuration, facilitating integration into compact board designs. Key electrical characteristics include a gate charge (Qg) of 130 nC maximum at 10V and input capacitance (Ciss) of 3540 pF maximum at 50V. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3540 pF @ 50 V |