IRFS33N15DTRLP
MOSFET N-CH 150V 33A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFS33N15DTRLP, offers a 150V drain-source voltage and a continuous drain current of 33A at 25°C (Tc). This device features a maximum on-resistance of 56mOhm at 20A and 10V Vgs, with a gate charge of 90 nC at 10V. The input capacitance (Ciss) is a maximum of 2020 pF at 25V. Designed for efficient power handling, it has a power dissipation rating of 170W at 25°C (Tc) and 3.8W at 25°C (Ta). The IRFS33N15DTRLP is housed in a TO-263-3, D2PAK package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V |