IRFS33N15DPBF
MOSFET N-CH 150V 33A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS33N15DPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) capability of 33A at 25°C (Tc). Key performance characteristics include a maximum Rds(On) of 56mOhm at 20A and 10V gate drive, with a typical gate charge (Qg) of 90 nC at 10V. The input capacitance (Ciss) is rated at 2020 pF maximum at 25V. This MOSFET offers significant power handling with a maximum dissipation of 170W (Tc) and 3.8W (Ta). Packaged in a TO-263-3, D2PAK (TO-263AB) surface mount package, the IRFS33N15DPBF is suitable for demanding environments, operating from -55°C to 175°C (TJ). Applications include power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V |
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