IRFS33N15D
MOSFET N-CH 150V 33A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS33N15D is an N-Channel power MOSFET designed for demanding applications. This component features a 150V drain-source breakdown voltage (Vdss) and a continuous drain current of 33A at 25°C (Tc). The Rds(on) is specified at a maximum of 56mOhm at 20A and 10V gate-source voltage. With a maximum gate charge (Qg) of 90 nC at 10V and input capacitance (Ciss) of 2020 pF at 25V, it offers efficient switching characteristics. Power dissipation is rated at 170W (Tc) and 3.8W (Ta). The device is housed in a D2PAK (TO-263-3) surface mount package, suitable for thermal management in power systems. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is utilized in various industrial sectors, including power supplies and motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V |
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