IRFS3307ZTRLPBF
MOSFET N-CH 75V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3307ZTRLPBF is a 75V N-Channel power MOSFET designed for demanding applications. This surface mount device, housed in a TO-263-3, D2PAK package, offers a continuous drain current of 120A (Tc) at 25°C and a maximum power dissipation of 230W (Tc). Key electrical characteristics include a low Rds On of 5.8mOhm at 75A and 10V, with a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 4750 pF at 50V. It operates across a wide temperature range of -55°C to 175°C (TJ) and features a Vgs(th) of 4V at 150µA and a maximum Vgs of ±20V. This component is suitable for use in automotive and industrial power management systems. It is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 50 V |
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