IRFS3307TRLPBF
MOSFET N-CH 75V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3307TRLPBF is a 75V N-Channel power MOSFET in a D2PAK package. This device offers a continuous drain current of 120A (Tc) at 25°C and a maximum power dissipation of 200W (Tc). The low on-resistance of 6.3mOhm at 75A and 10V gate-source voltage, coupled with a gate charge of 180nC at 10V, makes it suitable for high-current switching applications. Key parameters include an input capacitance (Ciss) of 5150pF at 50V and a threshold voltage (Vgs(th)) of 4V at 150µA. The operating temperature range is -55°C to 175°C (TJ). This component finds application in power supplies, industrial motor control, and automotive systems. The part is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V |
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