IRFS3307PBF
MOSFET N-CH 75V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3307PBF is a N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 120 A at 25°C (Tc). The low on-resistance, specified at a maximum of 6.3 mOhm @ 75 A, 10 V, combined with a high continuous drain current capability, makes it suitable for demanding power management tasks. With a maximum power dissipation of 200 W (Tc) and a junction temperature range of -55°C to 175°C, it offers robust thermal performance. The device is packaged in a surface mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) for efficient thermal management and automated assembly. Key parameters include a gate charge (Qg) of 180 nC @ 10 V and input capacitance (Ciss) of 5150 pF @ 50 V. This MOSFET is commonly utilized in industrial power supplies, electric vehicle systems, and renewable energy inverters.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V |
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