IRFS3207ZTRRPBF
MOSFET N-CH 75V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3207ZTRRPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 120A at 25°C. The low on-resistance, specified as 4.1mOhm maximum at 75A and 10V (Vgs), minimizes conduction losses. With a maximum power dissipation of 300W (Tc), it is suitable for demanding thermal environments. The device is packaged in a TO-263 (D2PAK) surface-mount configuration, supplied on tape and reel for automated assembly. Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 6920 pF at 50V. This MOSFET is utilized in industries such as automotive, industrial power control, and renewable energy systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6920 pF @ 50 V |
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