IRFS3207PBF
MOSFET N-CH 75V 170A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFS3207PBF, is designed for high-performance applications. This surface mount device features a Drain-to-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 170 A at 25°C (Tc). The Rds(On) is specified at a maximum of 4.5 mOhm at 75 A and 10 V gate drive. With a maximum power dissipation of 300 W (Tc) and a junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding thermal environments. Key parameters include an input capacitance (Ciss) of 7600 pF at 50 V and a gate charge (Qg) of 260 nC at 10 V. The device is housed in a TO-263-3, D2PAK package. Applications include power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 50 V |
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