IRFS31N20DTRR
MOSFET N-CH 200V 31A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFS31N20DTRR, an N-Channel HEXFET® power MOSFET. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 31A at 25°C (Tc). The Rds(on) is specified at a maximum of 82mOhm at 18A and 10V gate drive voltage. With a typical gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 2370 pF at 25V, this MOSFET is designed for efficient switching. The device offers significant power dissipation capabilities, rated at 200W (Tc) and 3.1W (Ta). Packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) and supplied on tape and reel, the IRFS31N20DTRR operates across a temperature range of -55°C to 175°C. This component is utilized in applications such as industrial power supplies, automotive systems, and high-power conversion.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 25 V |
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