IRFS31N20DTRLP
MOSFET N-CH 200V 31A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS31N20DTRLP is a 200V N-Channel power MOSFET designed for demanding applications. This component features a continuous drain current of 31A at 25°C (Tc) and a low on-resistance of 82mOhm maximum at 18A and 10V Vgs. With a gate charge (Qg) of 107 nC maximum at 10V and input capacitance (Ciss) of 2370 pF maximum at 25V, it offers efficient switching characteristics. The device supports a gate-source voltage (Vgs) up to ±30V and a threshold voltage (Vgs(th)) of 5.5V maximum at 250µA. Rated for a maximum power dissipation of 200W at 25°C (Tc), it is supplied in a TO-263-3, D2PAK surface-mount package, presented on tape and reel. This MOSFET is suitable for high-power conversion, industrial motor control, and automotive power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 25 V |