IRFS3107PBF
MOSFET N-CH 75V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3107PbF N-Channel Power MOSFET. This device features a 75V drain-source breakdown voltage and a continuous drain current of 195A at 25°C, with a maximum power dissipation of 370W at the same temperature. The Rds(on) is specified at 3mOhm maximum for a drain current of 140A and a gate-source voltage of 10V. Gate charge (Qg) is 240 nC at 10V, and input capacitance (Ciss) is 9370 pF at 50V. The MOSFET is designed for surface mounting in a TO-263-3, D2PAK package. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for high-power switching applications in automotive and industrial power supplies.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9370 pF @ 50 V |