IRFS3006PBF
MOSFET N-CH 60V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® Series N-Channel Power MOSFET, part number IRFS3006PBF, offers a 60V drain-source voltage and 195A continuous drain current at 25°C (Tc). This surface mount device features a low on-resistance of 2.5mOhm maximum at 170A and 10V gate drive. The IRFS3006PBF provides 375W power dissipation at 25°C (Tc) and a typical gate charge of 300 nC at 10V. Its input capacitance (Ciss) is 8970 pF maximum at 50V. The TO-263-3, D2PAK package is suitable for demanding applications in the automotive and industrial sectors. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 170A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 50 V |