IRFS3006-7PPBF
MOSFET N-CH 60V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3006-7PPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 240A at 25°C, with a maximum power dissipation of 375W. The low on-resistance of 2.1 mOhm at 168A and 10V gate drive voltage, coupled with a maximum gate charge of 300 nC at 10V, ensures efficient switching performance. Input capacitance (Ciss) is specified at 8850 pF. The MOSFET is housed in a surface-mount D2PAK (7-Lead) package, suitable for high-power density designs. Operating temperature range is -55°C to 175°C (TJ). This component finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 168A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8850 pF @ 50 V |
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